advanced power n-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss 650v fast switching characteristic r ds(on) 1 simple drive requirement i d 10a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c thermal resistance junction-case max. 1.2 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice 10 4.4 storage temperature range -55 to 150 18 104 linear derating factor 0.8 rating 650 30 pb free plating product 200705051-1/4 AP2761P-A -55 to 150 parameter 10 parameter g d s the to-220 package is universally preferred for all commercial- industrial applications. the device is suited for dc-dc ,ac-dc converters for power applications. g d s to-220
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =3.5a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =3.5a - 4.5 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =10a - 53 85 nc q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 82 - ns t f fall time r d =32 -36- ns c iss input capacitance v gs =0v - 2770 4430 pf c oss output capacitance v ds =15v - 320 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =10a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =10a, v gs =0v, - 610 - ns q rr reverse recovery charge di/dt=100a/s - 8.64 - c notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=1.2mh , r g =25 , i as =10a. 3.pulse width < 300us , duty cycle < 2%. 2/4 AP2761P-A
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP2761P-A 0 0.6 1.2 1.8 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3.5a v g =10v 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 3 6 9 12 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 10v 6.0v 5.5v 5.0v 0 3 6 9 0 10203040 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 6.0v 5.5v 5.0v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP2761P-A 0 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =330v v ds =410v v ds =520v
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